Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.35V SR x8 240-pin UDIMM RAM Module
Product Overview
This 4GB (1x 4GB) DDR3 1600 MT/s Single rank, x8 configuration RAM module from Samsung is for use in DDR3 compatible systems and operates at 1600 MT/s with an overall transfer rate of PC3-12800.
This RAM module also operates at a standard voltage of 1.35V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience.
| Technical Specifications | |
| Part No. | M378B5173EB0-YK0 |
| Capacity | 4GB (1x 4GB) |
| Brand | Samsung |
| Speed | DDR3-1600 - 1600MT/s - PC3-12800 |
| Voltage | 1.35V |
| Technology | DDR3 |
| Error Correction | Non-ECC |
| Signal Processing | Unbuffered |
| Form Factor | 240-pin UDIMM |
| Ranks | Single rank |
| CAS Latency | CL11 |
| Configuration | x8 |
| Pieces in Kit | 1 |
Compatibility
You can verify the compatibility of this RAM module in a number of ways:
- Use the RamCity Finder to see all guaranteed compatible RAM upgrades for your brand and model system or motherboard
- Search online to see if this product is on the QVL (Qualified Vendor List) for your system or motherboard
- Contact one of our Upgrade Evangelists for an expert opinion
Why is the speed of this RAM module shown as 1600 MT/s instead of 1600 Mhz?
When it comes to measuring DDR RAM speed, MT/s and MHz are used interchangeably, which is not actually correct.
DDR stands for double data rate which means data is transfers on both the rising and falling edges of the clock signal. Meaning that the transfer rate is roughly twice the speed of the I/O bus clock. This RAM module runs at 800MHz per second, but the effective rate is 1600 megatransfers per second (MT/s) because there are 800 million rising edges per second and 800 million falling edges per second of a clock signal running at 800 MHz.